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2N5681 2N5682
SILICON NPN TRANSISTORS
s s
SGS-THOMSON PREFERRED SALESTYPES NPN TRANSISTOR
APPLICATIONS GENERAL PURPOSE SWITCHING s GENERAL PURPOSE AMPLIFIERS
s
DESCRIPTION The 2N5681, 2N5682 are high voltage silicon epitaxial planar NPN transistors in Jedec TO-39 metal case intended for use as drivers for high power transistors in general purpose, amplifier and switching applications. The complementary PNP types are the 2N5679 and 2N5680 respectively.
TO-39
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol V CBO V CEO V EBO IC IB P tot P tot T stg Tj Parameter 2N5680 Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Base Current Total Dissipation at T c 25 o C Total Dissipation at T amb 50 o C Storage Temperature Max. Operating Junction Temperature 100 100 4 1 0.5 10 1 -65 to 200 200 Value 2N5682 120 120 V V V A A W W
o o
Unit
C C
July 1997
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2N5681 / 2N5682
THERMAL DATA
R thj-case R thj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 17.5 175
o o
C/W C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol I CEV Parameter Collector Cut-off Current (V BE = -1.5V) Test Conditions for 2N5681 for 2N5682 T c = 150 o C for 2N5681 for 2N5682 for 2N5681 for 2N5682 for 2N5681 for 2N5682 V EB = 4 V I C = 10 mA for 2N5681 for 2N5682 I C = 250 mA I C = 500 mA IC = 1 A I C = 250 mA I C = 250 mA IC = 1 A I C = 0.2 A I C = 100 mA IE = 0 I B = 25 mA I B = 50 mA I B = 200 mA V CE = 2 V V CE = 2 V V CE = 2 V V CE = 1.5 V V CE = 10 V f = 1KHz f =10MHz f = 1MHz 40 5 40 30 50 MHz pF V CE = 100 V V CE = 120 V V CE = 100 V V CE = 120 V V CB = 100 V V CB = 120 V V CB = 70 V V CB = 80 V Min. Typ. Max. 1 1 1 1 1 1 10 10 1 Unit A A A A A A A A A
I CBO I CEO I EBO
Collector Cut-off Current (I E = 0) Collector Cut-off Current (I B = 0) Emitter Cut-off Current (I C = 0)
V CEO(sus) Collector-Emitter Sustaining Voltage V CE(sat) Collector-Emitter Saturation Voltage Base-Emitter Voltage DC Current Gain Small Signal Current Gain Transition frequency Collector Base Capacitance
100 120 0.6 1 2 1 150
V V V V V V
V BE h FE hfe fT C CBO
V CB = 20 V
Pulsed: Pulse duration = 300 s, duty cycle 1.5 %
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2N5681 / 2N5682
TO-39 MECHANICAL DATA
mm DIM. MIN. A B D E F G H I L 5.08 1.2 0.9 45o (typ.) 12.7 0.49 6.6 8.5 9.4 0.200 0.047 0.035 TYP. MAX. MIN. 0.500 0.019 0.260 0.334 0.370 TYP. MAX. inch
G I H
D
A
L
F
E
B
P008B
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2N5681 / 2N5682
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. (c) 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A ...
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